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Herkese iyi akşamlar dostlar. G.Skill Ripjaws 1x16 GB DDR4 3600MHz CL18 RAM'e OC yaptım, biraz uğraştım. Şu anki ayarlarımı vermeden önce RAM'im bilgilerini şu şekilde:
Yaptığım OC'de RAM'lerim şu an 3800 MHz CL17 19 19 19 37 olarak ayarlı ama 3600 MHz CL16 18 18 18 36 olarak da kullanabiliyorum. Yaptığım ayarlar bu şekilde, sizce nasıl olmuş? Oyunlarda ara sıra anlık takılma sorunu tamamen çözüldü bu arada.
CPU: AMD Ryzen 5 5600.
Anakart: MSI A520M Pro.
Modprobe: FATAL: Module EEPROM not found in directory /lib/modules/7.0.0-tkg-bore
Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others
Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/7-0050
Guessing DIMM is in bank 1
Kernel driver used EE1004
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125 OK (0x3E54)
Fundamental Memory type DDR4 SDRAM
SPD Revision 1.1
Module Type UDIMM
EEPROM CRC of bytes 128-253 OK (0xAB72)
---=== Memory Characteristics ===---
Maximum module Speed 2666 MT/s (PC4-21300)
Size 16384 MB
Banks X Rows X Columns X Bits 16 X 17 X 10 X 64
SDRAM Device Width 8 bits
Ranks 1
Primary Bus Width 64 bits
AA-RCD-RP-RAS (cycles) 19-19-19-43
Supported CAS Latencies 23T, 22T, 21T, 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T
---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2666 19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400 17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133 15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-26
---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin) 0.750 ns
Maximum Cycle Time (tCKmax) 1.600 ns
Minimum CAS Latency Time (TAA) 13.750 ns
Minimum RAS to CAS Delay (tRCD) 13.750 ns
Minimum Row Precharge Delay (tRP) 13.750 ns
Minimum Active to Precharge Delay (tRAS) 32.000 ns
Minimum Active to Auto-Refresh Delay (tRC) 45.750 ns
Minimum Recovery Delay (tRFC1) 550.000 ns
Minimum Recovery Delay (tRFC2) 350.000 ns
Minimum Recovery Delay (tRFC4) 260.000 ns
Minimum Four Activate Window Delay (tFAW) 21.000 ns
Minimum Row Active to Row Active Delay (tRRD_S) 3.000 ns
Minimum Row Active to Row Active Delay (tRRD_L) 4.900 ns
Minimum CAS to CAS Delay (tCCD_L) 5.000 ns
Minimum Write Recovery Time (tWR) 15.000 ns
Minimum Write to Read Time (tWTR_S) 2.500 ns
Minimum Write to Read Time (tWTR_L) 7.500 ns
---=== Other Information ===---
Package Type Monolithic
Maximum Activate Count (Mac) Unlimited
Post Package Repair One row per bank group
Soft PPR Supported
Module Nominal Voltage 1.2 V
Thermal Sensor No
---=== Physical Characteristics ===---
Module Height 32 mm
Module thickness 2 mm front, 1 mm back
Module Reference Card'a revision 3
---=== Manufacturer Data ===---
Module Manufacturer G.Skill Intl
DRAM Manufacturer SK Hynix (former Hyundai Electronics)
Part Number F4-3600C18-16GVK
Number of SDRAM DIMMs detected and decoded: 1
░▒▓ ~
Decode-dimms version 4.4
Memory Serial Presence Detect Decoder
By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner,
Jean Delvare, Trent Piepho and others
Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/7-0050
Guessing DIMM is in bank 1
Kernel driver used EE1004
---=== SPD EEPROM Information ===---
EEPROM CRC of bytes 0-125 OK (0x3E54)
Of bytes written to SDRAM EEPROM 384
Total number of bytes in EEPROM 512Fundamental Memory type DDR4 SDRAM
SPD Revision 1.1
Module Type UDIMM
EEPROM CRC of bytes 128-253 OK (0xAB72)
---=== Memory Characteristics ===---
Maximum module Speed 2666 MT/s (PC4-21300)
Size 16384 MB
Banks X Rows X Columns X Bits 16 X 17 X 10 X 64
SDRAM Device Width 8 bits
Ranks 1
Primary Bus Width 64 bits
AA-RCD-RP-RAS (cycles) 19-19-19-43
Supported CAS Latencies 23T, 22T, 21T, 20T, 19T, 18T, 17T, 16T, 15T, 14T, 13T, 12T, 11T, 10T
---=== Timings at Standard Speeds ===---
AA-RCD-RP-RAS (cycles) as DDR4-2666 19-19-19-43
AA-RCD-RP-RAS (cycles) as DDR4-2400 17-17-17-39
AA-RCD-RP-RAS (cycles) as DDR4-2133 15-15-15-35
AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-30
AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-26
---=== Timing Parameters ===---
Minimum Cycle Time (tCKmin) 0.750 ns
Maximum Cycle Time (tCKmax) 1.600 ns
Minimum CAS Latency Time (TAA) 13.750 ns
Minimum RAS to CAS Delay (tRCD) 13.750 ns
Minimum Row Precharge Delay (tRP) 13.750 ns
Minimum Active to Precharge Delay (tRAS) 32.000 ns
Minimum Active to Auto-Refresh Delay (tRC) 45.750 ns
Minimum Recovery Delay (tRFC1) 550.000 ns
Minimum Recovery Delay (tRFC2) 350.000 ns
Minimum Recovery Delay (tRFC4) 260.000 ns
Minimum Four Activate Window Delay (tFAW) 21.000 ns
Minimum Row Active to Row Active Delay (tRRD_S) 3.000 ns
Minimum Row Active to Row Active Delay (tRRD_L) 4.900 ns
Minimum CAS to CAS Delay (tCCD_L) 5.000 ns
Minimum Write Recovery Time (tWR) 15.000 ns
Minimum Write to Read Time (tWTR_S) 2.500 ns
Minimum Write to Read Time (tWTR_L) 7.500 ns
---=== Other Information ===---
Package Type Monolithic
Maximum Activate Count (Mac) Unlimited
Post Package Repair One row per bank group
Soft PPR Supported
Module Nominal Voltage 1.2 V
Thermal Sensor No
---=== Physical Characteristics ===---
Module Height 32 mm
Module thickness 2 mm front, 1 mm back
Module Reference Card'a revision 3
---=== Manufacturer Data ===---
Module Manufacturer G.Skill Intl
DRAM Manufacturer SK Hynix (former Hyundai Electronics)
Part Number F4-3600C18-16GVK
Number of SDRAM DIMMs detected and decoded: 1
░▒▓ ~
Yaptığım OC'de RAM'lerim şu an 3800 MHz CL17 19 19 19 37 olarak ayarlı ama 3600 MHz CL16 18 18 18 36 olarak da kullanabiliyorum. Yaptığım ayarlar bu şekilde, sizce nasıl olmuş? Oyunlarda ara sıra anlık takılma sorunu tamamen çözüldü bu arada.
CPU: AMD Ryzen 5 5600.
Anakart: MSI A520M Pro.